Electronic structure of complex defects in silicon : divacancy and split 100 interstitial
نویسندگان
چکیده
2014 The Green’s function method together with a tight binding parametrisation of the band structure on Si are used to calculate the electronic structure of complex defects : the divacancy and the split 100 interstitial. Results are compared with E.H.T. calculations and some general conclusions on the best use of the method are drawn. Revue Phys. Appl. 15 (1980) 849-852 AVRIL 1980,
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